دیتاشیت STN3P6F6

STN3P6F6

مشخصات دیتاشیت

نام دیتاشیت STN3P6F6
حجم فایل 603.748 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

دانلود دیتاشیت STN3P6F6

STN3P6F6 Datasheet

مشخصات

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: STMicroelectronics STN3P6F6
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 2.6W
  • Total Gate Charge (Qg@Vgs): 6.4nC@10V
  • Drain Source Voltage (Vdss): 60V
  • Input Capacitance (Ciss@Vds): 340pF@48V
  • Continuous Drain Current (Id): 3A
  • Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 160mΩ@10V,1.5A
  • Package: SOT-223
  • Manufacturer: STMicroelectronics
  • Series: DeepGATE™, STripFET™ VI
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 48V
  • FET Feature: -
  • Power Dissipation (Max): 2.6W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223
  • Package / Case: TO-261-4, TO-261AA
  • Base Part Number: STN3P
  • detail: P-Channel 60V 2.6W (Tc) Surface Mount SOT-223